| PART |
Description |
Maker |
| BD13510S BD13916STU BD13516S |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Microsemi, Corp.
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| BD679ASTU BD677ASTU BD679ASNL BD675AS |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Spansion, Inc.
|
| KSD882YSTU |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| 2SA0794A 2SA0794 0276 2SA0794/2SA0794A2SA794/2SA79 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-126 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 500mA的一（c）|26
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
From old datasheet system
Power Transistors
|
KEMET Corporation
Matsshita / Panasonic
|
| 2SA0900S |
1 A, 18 V, PNP, Si, POWER TRANSISTOR, TO-126
|
PANASONIC CORP
|
| 2SA900 2SA0900 |
For low-frequency Power amplification Complementary 1 A, 18 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| 2SD669AC 2SD669D 2SD669AB 2SD669 2SD669A |
Silicon NPN Transistor
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
|
Hitachi Semiconductor
Maxim Integrated Products, Inc.
|
| 2SB1008 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor
|
Rohm CO.,LTD.
ROHM Electronics
|
| KSC5042M KSC5042MSTU |
High Voltage Switchihg Dynamic Focus Application 0.1 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Triple Diffused Planar Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
