| PART |
Description |
Maker |
| IGW25N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IGW20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| STGP10H60DF |
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
|
ST Microelectronics
|
| STGW40H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| IXSP24N60B |
48 A, 600 V, N-CHANNEL IGBT, TO-220AB TO-220, 3 PIN
High Speed IGBT
|
IXYS, Corp.
IXYS Corporation
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
