| PART |
Description |
Maker |
| IGW40N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IGW15N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IGW30N60H3 |
High speed IGBT IN Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IKW30N60H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| STGW40H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) From old datasheet system High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor G... Infineon Siemens Semiconductor Group SIEMENS AG
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
| IXSH35N135A IXSH35N140A |
1350V high speed IGBT 1400V high speed IGBT
|
IXYS
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
| IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|