| PART |
Description |
Maker |
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| EC3H03B |
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications 甚高频到超高频宽带低噪声放大器和OSC应用
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC4245 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
|
TOSHIBA
|
| BAT68-04E6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
INFINEON TECHNOLOGIES AG
|
| 1N5692AB 1N5688AB |
VHF-UHF BAND, 56 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
VHF-UHF BAND, 27 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| ZC703B ZC703C |
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| MV1630C |
VHF-UHF BAND, 18 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 2SC5757 2SC5757WE-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| ZC703 ZC703C |
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| 2SC5759 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor
|
