| PART |
Description |
Maker |
| CAT28F512H14I-90TE13 CAT28F512T14I-90TE7 CAT28F512 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON SEMICONDUCTOR
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| SST27SF512-90-3C-NHE SST27SF010-90-3C-PHE |
64K X 8 FLASH 12V PROM, 90 ns, PQCC32
128K X 8 FLASH 12V PROM, 90 ns, PDIP28
|
SILICON STORAGE TECHNOLOGY INC
|
| AM28F020-120C3EE AM28F020-120C3EI AM28F020-120C3FI |
256K X 8 FLASH 12V PROM, 120 ns, PDSO32
256K X 8 FLASH 12V PROM, 120 ns, PDIP32
|
ADVANCED MICRO DEVICES INC
|
| LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44
1M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO44
2M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO48
256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp.
SHARP ELECTRONICS CORP
|
| MX28F1000PRC-90-C4 MX28F1000PQC-90-C4 MX28F1000PTC |
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, REVERSE, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| M28F512-15XC1 M28F512-12C6 |
64K X 8 FLASH 12V PROM, 15 ns, PQCC32
64K X 8 FLASH 12V PROM, 12 ns, PQCC32
|
STMICROELECTRONICS
|
| AM28F512-75FC |
64K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
ADVANCED MICRO DEVICES INC
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| LH28F008SAB-KF12 |
1M X 8 FLASH 12V PROM, 120 ns, PBGA42
|
SHARP ELECTRONICS CORP
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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