| PART |
Description |
Maker |
| SST27SF512-90-3C-NHE SST27SF010-90-3C-PHE |
64K X 8 FLASH 12V PROM, 90 ns, PQCC32
128K X 8 FLASH 12V PROM, 90 ns, PDIP28
|
SILICON STORAGE TECHNOLOGY INC
|
| CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
| AM28F020-120C3EE AM28F020-120C3EI AM28F020-120C3FI |
256K X 8 FLASH 12V PROM, 120 ns, PDSO32
256K X 8 FLASH 12V PROM, 120 ns, PDIP32
|
ADVANCED MICRO DEVICES INC
|
| SST27SF512-70-3C-NG SST27SF512-70-3C-WH SST27SF512 |
(SST27SFxxx) 256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 12V PROM, 70 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 32K X 8 FLASH 12V PROM, 70 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 32K X 8 FLASH 12V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 12V PROM, 90 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| M28F512-15XC1 M28F512-12C6 |
64K X 8 FLASH 12V PROM, 15 ns, PQCC32
64K X 8 FLASH 12V PROM, 12 ns, PQCC32
|
STMICROELECTRONICS
|
| W29C512MT12B |
64K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
WINBOND ELECTRONICS CORP
|
| M25P05-AVMN6P M25P05-AVMN6TP M25P05-AVDW6TP M25P05 |
64K X 8 FLASH 2.7V PROM, PDSO8 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
64K X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, TSSOP-8
64K X 8 FLASH 2.7V PROM, DSO8 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8
|
Numonyx Asia Pacific Pte, Ltd.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| M25P05-AVMP6 M25P05-AVDW6T |
64K X 8 FLASH 2.7V PROM, DSO8 VDFPN-8
64K X 8 FLASH 2.7V PROM, PDSO8
|
ST Microelectronics
NUMONYX
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
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