| PART |
Description |
Maker |
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR
4M X 32 DDR DRAM, 5 ns, PBGA90
8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond
WINBOND ELECTRONICS CORP
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
26615150 DDR SDRAM的注册模
DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82
256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82
64M X 16 DDR DRAM, 0.3 ns, PBGA100
64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100
128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100
64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M395T2863QZ4-CE65 M395T2863QZ4-CE68 M395T2863QZ4-C |
128M X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE AND ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
BCD Semiconductor Manufacturing, Ltd.
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HYMP532U64CP6-Y5 HYMP512U64CP8-C4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, SODIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYMP125P72CP4-C4 HYMP125P72CP4-S5 HYMP125P72CP4-S6 |
240pin Registered DDR2 SDRAM DIMMs
256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
