PART |
Description |
Maker |
SI5410DU-T1-GE3 |
9.8 A, 40 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
91800601000 |
110 Ohm, 26 AWG stranded (7x34) .018 TC conductors
|
List of Unclassifed Man...
|
PHB65N06LT |
TrenchMOS transistor Logic level FET 63 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V. Philips Semiconductors
|
BTS244Z09 BTS244ZE-3043 BTS244ZE-3062A |
Speed TEMPFET 35 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, TO-220, 5 PIN
|
Infineon Technologies AG
|
APTC60AM18SC |
143 A, 600 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|
IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|47SMD
|
IXYS, Corp.
|
OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
|
Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
|
PHD55N03LTA PHB55N03LTA PHP55N03LTA PHD55N03LTA118 |
55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TrenchMOS TM Logic Level FET TrenchMOS(TM)Logic Level FET
|
NXP SEMICONDUCTORS Philips
|
NS471Q6 NS471B5 |
RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
|
Vishay Sfernice
|
NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143 From old datasheet system
|
NEC Electron Devices
|
|