Part Number Hot Search : 
T1050H6G ULN2070B A170RPE 240M00 T273D S5778A LC758 HCC40
Product Description
Full Text Search

IRFD122 - (IRFD123) Field Effect Power Transistor

IRFD122_6949848.PDF Datasheet

 
Part No. IRFD122
Description (IRFD123) Field Effect Power Transistor

File Size 323.99K  /  2 Page  

Maker

General Electric Solid State



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: IRFD120
Maker: IR
Pack: DIP-4
Stock: 5112
Unit price for :
    50: $0.47
  100: $0.45
1000: $0.42

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ IRFD122 Datasheet PDF Downlaod from Datasheet.HK ]
[IRFD122 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for IRFD122 ]

[ Price & Availability of IRFD122 by FindChips.com ]

 Full text search : (IRFD123) Field Effect Power Transistor
 Product Description search : (IRFD123) Field Effect Power Transistor


 Related Part Number
PART Description Maker
MTM8N60 MTH8N60 MTH8N55 (MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MTP2N80 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MTM15N20 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MTP10N35 MTP10N40 Power Field Effect Transistor
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
MRFG35010N RF Power Field Effect Transistor
FREESCALE[Freescale Semiconductor, Inc]
MRF284 MRF284LSR1 MRF284LR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
 Related keyword From Full Text Search System
IRFD122 Application IRFD122 参数网 IRFD122 Range IRFD122 IC在线 IRFD122 Single
IRFD122 Stereo IRFD122 stmicroelectronics IRFD122 pitch IRFD122 isa bus IRFD122 ptc data
 

 

Price & Availability of IRFD122

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
3.1116919517517