PART |
Description |
Maker |
SPLE10N81G2 |
Actively Cooled Diode Laser Bar, 600 W cw at 808 nm
|
OSRAM GmbH
|
L4-2495-002 L4-2495-001 |
High-Power 4.5 W 808 nm Fiber-Coupled Diode Laser
|
JDS Uniphase Corporation
|
SPLBS81-6 |
Unmounted Laser Bars, 82.5% Filling Factor, 808 nm
|
OSRAM GmbH
|
SPLCG810 |
Laser C-Mount 808 nm, 100 mym aperture
|
Infineon
|
ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管 1557 nm, LASER DIODE 1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE 798 nm, LASER DIODE High Power Density 1W Laser Diode
|
SONY
|
NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
LT050MS LT050PS |
Compact Laser Diode for DVD(635nm-5mW) Red Laser Diode
|
SHARP[Sharp Electrionic Components]
|
DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|