| PART |
Description |
Maker |
| SF18 SF12-AP SF12-BP SF14-AP SF16-AP |
1.0 Amp Super Fast Recovery Rectifiers 50 to 600 Volts
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components
|
| 1S922 1S923 1S923TR 1S922TR |
Small Signal Diode 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35
High Conductance Fast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| FM400109 FM4003-T FM4001-T |
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
Rectron Semiconductor
RECTRON LTD
|
| RL153G-F 1N4007GH05 1N4007GH03-2 1N4005GH08 |
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| MA141WATX MA142AH 2SK663H |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, SILICON, SIGNAL DIODE
30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
PANASONIC CORP
|
| J4248 SV4247US SV4248US SV4249US |
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 1000 V, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
| VF12 VF5 VF20 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.13 A, 5000 V, SILICON, SIGNAL DIODE
0.09 A, 20000 V, SILICON, SIGNAL DIODE
|
MICROSEMI CORP
|
| RL205M12 1N5395M12 1A6-J RL1N4001-N RECTRONLTD-1A1 |
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 50 V, SILICON, SIGNAL DIODE
2.5 A, 100 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
|
