| PART |
Description |
Maker |
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BUZ901X4S MNT-LC32030-C4 |
32 A, 200 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SOT-227, 4 PIN
32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET SMARTPACK-10
|
TT electronics Semelab, Ltd.
|
| FRK9260R FRK9260D FRK9260H |
26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| AP9120GH-HF AP9120GJ-HF AP9120GH-HF-14 AP9120GJ-HF |
8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower On-resistance
Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| OM6414SP3 |
4 A, 200 V, 0.18 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, SIP-18
|
Samwha Electronics
|
| VP0540 VP0535 VP0535N3 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
P-Channel Enhancement-Mode Vertical DMOS FETs
|
SUPERTEX INC
Supertex, Inc
|
| IRFF230 2N6798LCC4-JQR-B 2N6798LCC4-JQR-A |
N-CHANNEL ENHANCEMENT
5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF HERMETIC SEALED, METAL, TO-39, 3 PIN
|
Seme LAB
TT electronics Semelab, Ltd.
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
