| PART |
Description |
Maker |
| MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns.
3-in-1 silicon delay line. Output delay 30ns.
3-in-1 silicon delay line. Output delay 90ns.
3-in-1 silicon delay line. Output delay 12ns.
3-in-1 silicon delay line. Output delay 25ns.
Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No
3-in-1 silicon delay line. Output delay 70ns.
3-in-1 silicon delay line. Output delay 75ns.
3-in-1 silicon delay line. Output delay 50ns.
3-in-1 silicon delay line. Output delay 20ns.
3-in-1 silicon delay line. Output delay 80ns.
3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| SM30CXC614 SM30CXC624 SM14CXC170 SM02CXC190 SM02CX |
1160 A, 3000 V, SILICON, RECTIFIER DIODE
1106 A, 3000 V, SILICON, RECTIFIER DIODE
440 A, 1400 V, SILICON, RECTIFIER DIODE
760 A, 200 V, SILICON, RECTIFIER DIODE
440 A, 200 V, SILICON, RECTIFIER DIODE
940 A, 2000 V, SILICON, RECTIFIER DIODE
1610 A, 2600 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 1N5235B 1N5234B 1N5251B 1N5246B 1N5240B 1N5230B 1N |
Silicon Z-Diodes for Voltage Stabilization(绋冲??靛?62V锛?ǔ瀹??娴?.0mA???榻?撼浜??绠?
Silicon Z-Diodes for Voltage Stabilization(稳定电压6.8V，稳定电0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电.8V时，稳定电流20mA的的硅齐纳二极管
Silicon Z-Diodes for Voltage Stabilization(稳定电压62V，稳定电.0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电2V，稳定电流二点○毫安的硅齐纳二极管）
Silicon Z-Diodes for Voltage Stabilization(稳定电压18V，稳定电.0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电18V的稳定电.0毫安的硅齐纳二极管）
Silicon Z-Diodes for Voltage Stabilization(稳定电压36V，稳定电.4mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电6V的，稳定电流三点四毫安的硅齐纳二极管
Silicon Z-Diodes for Voltage Stabilization(稳定电压2.8V，稳定电0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电.8V时，稳定电流20mA的的硅齐纳二极管
Silicon Z-Diodes 硅的Z -二极
Silicon Z-Diodes for Voltage Stabilization(稳定电压4.7V，稳定电0mA的硅齐纳二极
From old datasheet system
Silicon Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| MR750RL MR751RL MR752RL MR754RL |
6A 50V Silicon Rectifier
6A 100V Silicon Rectifier
6A 200V Silicon Rectifier
6A 400V Silicon Rectifier
|
ON Semiconductor
|
| 2N6346A 2N6347A 2N6345A 2N6343A 2N6348A 2N6342A 2N |
12-A silicon triac. 200 V.
12-A silicon triac. 400 V.
12-A silicon triac. 800 V.
12-A silicon triac. 600 V.
|
General Electric Solid State
|
| P1200A07 P1200S P1200D P1200J P1200B P1200K |
Standard silicon rectifier diodes 12 A, 800 V, SILICON, RECTIFIER DIODE
Standard silicon rectifier diodes 12 A, 100 V, SILICON, RECTIFIER DIODE
Standard silicon rectifier diodes 12 A, 600 V, SILICON, RECTIFIER DIODE
Standard silicon rectifier diodes 标准硅整流二极管
Standard silicon rectifier diodes 12 A, 200 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| BYP35A0506 BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A |
35 A, 300 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 50 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 100 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 600 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 200 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 400 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
Silicon Press-Fit-Diodes
|
Semikron International
|
|
