PART |
Description |
Maker |
S40B |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
HY57V56420AT-H |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
HY57V12820LT-P |
64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
M378B6573EZ0-CG8 |
64M X 64 SYNCHRONOUS DRAM MODULE, DMA240
|
|
HYM72V64736T8-H |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
HYM72V64756AT8-8 HYM72V64756AT8-S |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
D4564841G5 UPD4564441 UPD4564163 UPD4564841 |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation Toshiba, Corp.
|
M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system 4-BANK x 2097152-WORD x 8-BIT 64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|