| PART |
Description |
Maker |
| STK621-033N-E |
3-phase Inverter Motor Drive Inverter Hybrid IC
|
Sanyo Semicon Device
|
| TLP350 |
Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter
Photocouplers - Photo-IC Output
|
Toshiba Semiconductor
|
| PSI150/24/EU PSI100/24/EU |
400V 14A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package; A OM5008ST with Standard Packaging
INVERTER 100W 12V DC TO AC
INVERTER 150W 24V DC TO AC 24V直流逆变50瓦到AC
|
TRACO ELECTRONIC AG
|
| ST333C..CSERIES 2694 ST333C04CFM0 ST333C08CFM0 ST3 |
800V435A逆变晶闸管采用TO - 200AB（电子北辰）封装
INVERTER GRADE THYRISTORS
From old datasheet system
400V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package
800V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package
Silicon Controlled Rectifier, 1435 A, 800 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
|
International Rectifier
Vishay Semiconductors
|
| STK628-130-E |
Inverter for IH Cooker Inverter Hybrid IC
|
Sanyo Semicon Device
|
| 74AHCT3G04DP 74AHC3G04 74AHC3G04DC 74AHC3G04DP 74A |
INVERTER 反相
74AHC3G04; 74AHCT3G04; Inverter
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 74V2G05 74V2G05STR |
TRIPLE INVERTER (OPEN DRAIN)
TRIPLE INVERTER 3个反相器
|
ST Microelectronics
STMicroelectronics N.V.
|
| CT15SM-24 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE
GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| CEPH249 CIOH175 |
INVERTER INVERTER TRANSFORMER
|
Sumida, Corp.
|
| NL27WZ14DFT2 NL27WZ14DTT1 NL27WZ14 |
Dual Inverter, Schmitt
Dual Schmitt-Trigger Inverter 27WZ SERIES, DUAL 1-INPUT INVERT GATE, PDSO6
|
ONSEMI[ON Semiconductor]
|
| HCF4502M013TR HCF4502B02 HCF4502 HCF4502BM1 |
4000/14000/40000 SERIES, 6-BIT DRIVER, INVERTED OUTPUT, PDSO16
STROBED HEX INVERTER/BUFFER
STROBED HEX INVERTER/BUFFER
|
STMicroelectronics
ST Microelectronics
|
| 74AHCT04D-T |
Hex inverter - Description: Hex Inverter; TTL Enabled ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: /- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3 ns; Voltage: 4.5-5.5 V
|
NXP SEMICONDUCTORS
|
