| PART |
Description |
Maker |
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| BUX14 BUX14-JQR |
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| FJPF13009TU |
NPN Silicon Transistor; Package: TO-220F; No of Pins: 3; Container: Rail 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FZT458TA |
0.3 A, 400 V, NPN, Si, POWER TRANSISTOR
|
Diodes, Inc.
|
| QM400HA-2H |
400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 2SC4106L |
7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
SANYO SEMICONDUCTOR CO LTD
|
| NTC2518V125 |
5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
|
| BUV48 |
15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
|
CENTRAL SEMICONDUCTOR CORP
|
| TE13005 |
6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220
|
TEMIC SEMICONDUCTORS
|
| MJE13070-6258 MJE13070-6200 |
5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| SGSIF421 |
5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
|
STMICROELECTRONICS
|
|
