| PART |
Description |
Maker |
| SKM150GAL121D |
150 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON INTERNATIONAL
|
| SI3440DV-T1 |
1200 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| ME601615 ME601215 |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) 3 PHASE, 150 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| BSM100GT120DN2 100T12N2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CM150DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| VS-GB150TH120U |
Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A
|
Vishay Siliconix
|
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| FZ50A06KL DF100R12KF-A FZ1200R12KF1 |
50 A, 600 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
1200 A, 1200 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
| PM150RL1A120 |
Three Phase IGBT Inverter Brake 150 Amperes/1200 Volts
|
Powerex Power Semiconductor...
|
| PM150CVA120 |
Intellimod⑩ Module Three Phase IGBT Inverter Output (150 Amperes/1200 Volts)
|
Powerex Power Semiconductors
|
|
