| PART |
Description |
Maker |
| UPA2520T1H-T2-AT |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??)
TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管)
TinyFET P-Channel MOSFET Preliminary Information
TinyFET⑩ P-Channel MOSFET Preliminary Information
TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| BC847BDW1T3 |
General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
|
Hynix Semiconductor, Inc.
|
| CGS103U075R4L3PH CGS103U075R4L4PHS CGS103U075R4L3P |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, STUD MOUNT RADIAL LEADED, CAN
|
Aerovox, Corp.
|
| NAND1282R4A2AN6T |
8M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48
|
NUMONYX
|
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| HFA1102Y |
OP-AMP, 10000 uV OFFSET-MAX, UUC8
|
HARRIS SEMICONDUCTOR
|
| ZX10R-14 |
Power Splitter/Combiner 2 Way-0 Resistive 50Ω DC to 10000 MHz
|
Mini-Circuits
|
|
