| PART |
Description |
Maker |
| W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240
256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240
64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc.
XILINX INC
|
| HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMT125R7AFP4C HMT125R7AFP8C HMT31GR7AMP4C HMT151R7 |
DDR3 SDRAM Registered DIMM Based on 1Gb A version
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, RDIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYMP125P72CP4L-C4 HYMP41GP72CNP4L-C4 HYMP41GP72CNP |
240pin DDR2 VLP Registered DIMMs
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| HYMD512646AL8-H HYMD512646AL8-K HYMD512646A8-H HYM |
Unbuffered DDR SDRAM DIMM
128M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HYS72T128320HP-3.7-B |
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
QIMONDA AG
|
| HYS72T128000HR-2.5-B |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
INFINEON TECHNOLOGIES AG
|
| M392B5673GB0-CK0 M392B2873GB0-CK0 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
128M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| K4H1G0638B-TLB00 K4H1G0738B-TCB00 |
256M X 4 DDR DRAM MODULE, 0.75 ns, PDSO66
128M X 8 DDR DRAM MODULE, 0.75 ns, PDSO66
|
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
|
