| PART |
Description |
Maker |
| AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44
1M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO44
2M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO48
256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp.
SHARP ELECTRONICS CORP
|
| DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B |
1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48
1M X 16 FLASH 5V PROM, 120 ns, CQCC48
1M X 16 FLASH 5V PROM, 120 ns, CPGA50
1M X 16 FLASH 5V PROM, 150 ns, CQCC48
|
|
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| AS8FLC1M32BQT-90_IT AS8FLC1M32BQT-90_Q AS8FLC1M32B |
Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HIP-66
1M X 32 FLASH 3V PROM, 100 ns, CQFP68
|
http://
Austin Semiconductor, Inc
MICROSS COMPONENTS
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| M29W400B-100M5 STMICROELECTRONICS-M29W400T-120ZA1T |
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO44
512K X 8 FLASH 2.7V PROM, 100 ns, PBGA48
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO44
|
STMICROELECTRONICS
|
| PC28F256J3D-95 PC28F640J3D75A PC28F128J3D75B PC28F |
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64 LEAD FREE, ESBGA-64
4M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| AM29LV400BT55REC AM29LV400BT70EI AM29LV400BB55REC |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
IC,FLASH,4MBIT,CMOS,256KX8 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM
512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PDSO32
512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol...
SILICON STORAGE TECHNOLOGY INC
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