PART |
Description |
Maker |
SST85LD0128-120-C-LBZE |
NANDrive IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
|
Silicon Storage Technology, Inc.
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AM29F040B-120JF AM29F040B-90ED |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
|
Spansion, Inc. SPANSION LLC
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AM29F400BT-120ED AM29F400BT-55ED AM29F400BB-55SD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 120 ns, PDSO48 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
|
Spansion, Inc.
|
UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor Panasonic Corporation
|
WED7GXXXIDE36 WED7G016IDE33ADC25 WED7G016IDE36ADC2 |
DimmDrive Solid State IDE Flash Module with Power Failure Protection IDE36 DimmDrive Solid State IDE Flash Module IDE33
|
WEDC[White Electronic Designs Corporation]
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TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭 TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd. Intel, Corp. Intel Corp. Intel Corporation
|
CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory 90ns 2M-bit CMOS flash memory 70ns 2M-bit CMOS flash memory 1 Megabit CMOS Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http:// CATALYST[Catalyst Semiconductor]
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
SST58LM024-70-C-FRJ SST58SM024-70-C-FSI SST58SM024 |
ER 16C 16#16 PIN PLUG PCMCIA Memory Card IC; Supply Voltage Max:5V; Package/Case:16-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Surface Mount PWR SUPPLY 350W 3-6V CVR/FAN PCMCIA Memory Card IC; Supply Voltage Max:5V; Package/Case:16-NSOIC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No ER 5C 3#12 2#4 SKT PLUG MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:4.1A; Current, Idm pulse:-30A; Power, Pd:1.3W; Resistance, Rds on:0.042R; SMD:1; Charge, gate p ER 24C 24#16 PIN PLUG ER 5C 3#12 2#4 PIN PLUG CAP, 1UF, TANT, 35V, K, RAD, .100, -55C 85C FLASH MEMORY DRIVE CONTROLLER, XMA ATA-Disk Module FLASH MEMORY DRIVE CONTROLLER, XMA PWR SUPP 350W 6-12V CVR TOP FAN FLASH MEMORY DRIVE CONTROLLER, XMA ATA-Disk Module ATA的磁盘模
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
LH28F400BG-TL85 LH28F400BG-L85 LH28F400BG LH28F400 |
4M-BIT (256 x 16) SmartVoltage Flash Memory 4M-BIT (256KB x16) SmartVoltage Flash MEMORY 4M-BIT(256KBx16) SmartVoltage Flash MEMORY 4M-BIT (256K x 16)Smart Voltage Flash Memory
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SHARP[Sharp Electrionic Components]
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