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GS8342DT11BD-400 - QDR SRAM, PBGA165

GS8342DT11BD-400_6703695.PDF Datasheet


 Full text search : QDR SRAM, PBGA165
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18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
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IDT
http://
Integrated Device Technology, Inc.
CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C 18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165
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Cypress Semiconductor, Corp.
CY7C1415BV18-250BZI CY7C1415BV18-167BZI 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
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CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟
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GS8342DT11BD-400 crystal GS8342DT11BD-400 search GS8342DT11BD-400 ohm GS8342DT11BD-400 circuit GS8342DT11BD-400 mode
 

 

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