| PART |
Description |
Maker |
| AD5272BRMZ-20-RL7 AD5272BRMZ-100-RL7 AD5272BCPZ-20 |
1024-/256-Position, 1% Resistor Tolerance Error, I2C Interface and 50-TP Memory Digital Rheostat
|
Analog Devices
|
| AD5270 AD5271 |
1024-Position, 1% Resistor Tolerance Error, SPI Interface and 50-TP Memory Digital Rheostat
256-Position, 1% Resistor Tolerance Error, SPI Interface and 50-TP Memory Digital Rheostat
|
Analog Devices
|
| IDT72211L12J IDT72201L20L |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 512 X 9 OTHER FIFO, PQCC32
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 256 X 9 OTHER FIFO, CQCC32
|
Integrated Device Technology, Inc.
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| AD5231BRU50-REEL7 |
Nonvolatile Memory, 1024-Position Digital Potentiometers
|
Analog Devices, Inc.
|
| AD5290YRMZ50-RL7 AD5290YRMZ100-RL7 AD5290YRMZ10-RL |
Compact 30V/5V 256-Position Digital Potentiometer 50K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO10
Compact 30V/5V 256-Position Digital Potentiometer 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO10
Compact 30V/5V 256-Position Digital Potentiometer 10K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO10
|
Analog Devices, Inc.
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| AD5200BRM10 AD5200BRMZ10 AD5201BRMZ10 AD5200BRMZ50 |
256-Position and 33-Position Digital Potentiometers
256-Position and 33-Position Digital Potentiometers
|
Analog Devices
|
| AD5251 AD5251BRU1 AD5251BRU10 AD5251BRU100 AD5251B |
I<SUP>2</SUP>C, Nonvolatile Memory, Dual 64-Position Digital Potentiometer
I<SUP>2</SUP>C, Nonvolatile Memory, Dual 256-Position Digital Potentiometer
I2C, Nonvolatile Memory, Dual 256-Position Digital Potentiometer
I2C, Nonvolatile Memory, Dual 64-Position Digital Potentiometer
Dual 64-and 256-Position I2C Nonvolatile Memory Digital Potentiometers
|
AD[Analog Devices]
|
| ZL5011006 ZL50111 ZL50114GAG2 ZL50110 ZL50110GAG Z |
128, 256 and 1024 Channel CESoP Processors
|
ZARLINK[Zarlink Semiconductor Inc]
|
| AD5259EVAL AD5259 AD5259BCPZ100-R7 AD5259BCPZ10-R7 |
Nonvolatile, I-2C Compatible 256-Position, Digital Potentiometer
Nonvolatile, I2C Compatible 256-Position, Digital Potentiometer
Nonvolatile, I2C-Compatible 256-Position, Digital Potentiometer
|
AD[Analog Devices]
http://
|
| ZL50110GAG ZL50110GAG2 ZL50114GAG2 ZL50111GAG ZL50 |
128, 256, 512 and 1024 Channel CESoP Processors
|
Zarlink Semiconductor Inc
|
