PART |
Description |
Maker |
BF994ST/R |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 30mA的一(d)|的SOT - 143
|
Vishay Intertechnology, Inc.
|
K81A1 |
NOISE DIODE FOR USE AS A STANDARD NOISE SOURCE FOR METRIC WAVES
|
NXP Semiconductors
|
BFG67/XT/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143 晶体管|晶体管|叩| 10V的五(巴西)总裁| 50mA的一(c)|的SOT - 143
|
NXP Semiconductors N.V.
|
ADR365A ADR365AUJZ-REEL7 |
Low Power, Low Noise Voltage References with Sink/Source Capability 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO5 Low Power, Low Noise Voltage References with Sink/Source Capability 低功耗,低噪声电压与水槽参源能
|
Analog Devices, Inc.
|
SMN7105 SMN7105-D1C |
SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2 |
NMA 2000 NOISE SOURCE SERIES
|
Micronetics, Inc.
|
SMN7114-C2A SMN7114 |
SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
ADR441 ADR444 |
Ultralow Noise, LDO XFET? 2.5V Voltage Reference w/Current Sink and Source Ultralow Noise, LDO XFET? 4.096V Voltage Reference w/Current Sink and Source
|
Analog Devices
|
D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1022UK D1022 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
ADR364AUJZ-REEL7 ADR360 ADR360B ADR360BUJZ-REEL7 A |
LOW POWER, LOW NOISE VOLTAGE REFERENCES WITH SINK/SOURCE CAPABILITY
|
AD[Analog Devices]
|
D1208UK D1208 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)
|
Seme LAB TT electronics Semelab Limited
|