| PART |
Description |
Maker |
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| MMBD354LT1 |
Dual Hot Carrier Mixer Diodes(双热载流子混频器二极 SILICON, UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| BAT19-ARX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| BAT29 |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| 1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications
|
TOSHIBA
|
| 1SS29501 1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS
|
Toshiba Semiconductor
|
| MBD110DWT1 |
Dual Schottky Barrier Diodes(双肖特基势垒二极 SILICON, VHF-UHF BAND, MIXER DIODE
|
ON Semiconductor
|
| HSMS-8202-TR2G HSMS-8209-TR2G HSMS-8202-BLKG |
SILICON, KU BAND, MIXER DIODE
Surface Mount Microwave Schottky Mixer Diodes
|
AVAGO TECHNOLOGIES LIMITED
|
| DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
|
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
|
