| PART |
Description |
Maker |
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| FZ50A06KL DF100R12KF-A FZ1200R12KF1 |
50 A, 600 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
1200 A, 1200 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
| PHMB200BS12 |
IGBT 200 A 1200 V
|
Nihon Inter Electronics Corporation
|
| CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| PM200DSA120 |
Intellimod Module Single Phase IGBT Inverter Output (200 Amperes/1200 Volts)
Intellimod⑩ Module Single Phase IGBT Inverter Output (200 Amperes/1200 Volts)
|
Powerex Power Semiconductors
|
| PP200B120-ND |
H-Bridge POW-R-PAK IGBT Assembly 200 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
