| PART |
Description |
Maker |
| MU9C1480-15DC |
Content Addressable Memory 内容可寻址存储
|
ICE Components, Inc.
|
| R8A20410BG |
20Mbit QUAD-Search Content Addressable Memory
|
Renesas Electronics Corporation
|
| P1480 |
LAN CAM 1KX64 BIT CMOS CONTENT ADDRESSABLE MEMORY
|
Zarlink Semiconductor Inc.
|
| MU9C1480A MU9C1480A-12DC MU9C1480A-12DI MU9C1480A- |
THE 1024 X 64-BIT LANCAM FACILITATES NUMEROUS 1024 X 64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (CAM)
|
ETC
|
| DS2406PTR |
Dual Addressable Switch Plus 1Kb Memory
|
Maxim Integrated Products
|
| DS2406P/T DS2406P/R DS2406PR DS2406PT DS2406 |
1K X 1 OTPROM, PBCY3
Dual Addressable Switch Plus 1kbit Memory
|
MAXIM INTEGRATED PRODUCTS INC
Dallas Semiconductor
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DS2405Y DS2405V DS2405P DS2405T |
Addressable Switch
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
|
| SA5090 SA5090D SA5090N NE5090 NE5090D NE5090N |
Addressable relay driver
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| HD74HC259FPEL HD74HC259RPEL HD74HC259P |
8-bit Addressable Latch
|
Renesas Electronics Corporation
|
