| PART |
Description |
Maker |
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MPSH10 MPSH11 ON2346 MPSH10-D |
VHF/UHF Transistors NPN Silicon
CASE 294, STYLE 2 TO2 (TO26AA)
From old datasheet system
VHF/UHF Transistors(NPN Silicon)
(MPSH10 / MPSH11) VHF/UHF Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| EC3H03B |
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications 甚高频到超高频宽带低噪声放大器和OSC应用
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 1N5712-AR1 |
SILICON, VHF-UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| BB515E6433 |
VHF-UHF BAND, 18.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS A G
|
| ZC703B ZC703C |
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
Renesas Electronics Corporation
|
| 2SC5758 2SC5758WF-TR-E |
Silicon NPN Epitaxial VHF / UHF Wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 2SC5757 2SC5757WE-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| MV1660BCHIP 1N5472A MV1630 MV1630CCHIP 1N5444CCHIP |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
