| PART |
Description |
Maker |
| SHB211 |
2 DDR3 SODIMM support up to 8 GB
|
Axiomtek Co., Ltd.
|
| HMT312S6BFR6C |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT112S6TFR8A-G7 HMT125S6TFR8A-G7 HMT112S6TFR8A-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| VL-MM9-2EBN |
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| SHB210 |
2 DDR2-533/665 SODIMM support up to 4 GB
|
Axiomtek Co., Ltd.
|
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| SI476X |
Worldwide FM band support (64-108 MHz) AM/FM HDR support Worldwide AM band support
|
Silicon Laboratories
|
| Z2647 Z2633 Z2617 Z2615 Z2630 Z2618 Z2620 Z2645 Z2 |
128MB DDR SDRAM SODIMM
TRANSFORMER 18VA 2X 18V
TRANSFORMER 10VA 2X 12V
TRANSFORMER 10VA 2X 6V
TRANSFORMER 18VA 2X 9V
TRANSFORMER 10VA 2X 15V
64MB SDRAM SODIMM
TRANSFORMER 30VA 2X 15V
|
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| M470T6464AZ3-LD5 M470T2864AZ3-LD5 |
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Samsung Semiconductor Co., Ltd.
|
