| PART |
Description |
Maker |
| M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
TVS ZENER BIDIRECT 1500W 13V SMC
TVS BIDIRECT 1500W 130V SMC
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| XWM8148CFT/V WM8148 |
TVS BIDIRECT 400W 5.0V SMA
12-bit/12MSPS CCD/CIS Analogue Front End/Digitiser
|
Wolfson Microelectronics plc
Wolfson Microelectronic...
|
| WM2604 WM2604IDT WM2604CDT |
QUAD 10-BIT SERIAL INPUT VOLTAGE OUTPUT DAC
TVS BIDIRECT 600W 64V SMB
|
WOLFSON[Wolfson Microelectronics plc]
|
| MB81V4400C-60 MB81V4400C-70 |
CMOS 1M x 4 Bit Fast Page Mode Dynamic RAM(CMOS 1M x 4位快速页模式动态RAM)
|
Fujitsu Limited
|
| MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存）
|
Fujitsu, Ltd.
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| NX29F010-90PL NX29F010-70TI NX29F010-70W NX29F010- |
1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY
|
ETC[ETC]
|
| UPD444016G5-10-7JF UPD444016G5-12-7JF UPD444016G5- |
CONNECTOR ACCESSORY 连接器附
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| IDT74FCT164245T IDT74FCT164245TPAG IDT74FCT164245T |
FCT SERIES, DUAL 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO48
FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
3.3V TO 5.0V 16-Bit Translating Transceiver
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| IDT54FCT22 IDT54FCT2245AT IDT54FCT2245ATD IDT54FCT |
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FCT SERIES, 8-BIT TRANSCEIVER, INVERTED OUTPUT, PDSO20
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FCT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDFP20
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS 快速CMOS八路双向收发
CAP 0.47UF 16V 80-20% Y5V SMD-0805 TR-7-PL SN-NIBAR 快速CMOS八路双向收发
CAP 0.22UF 50V 80-20% Z5U SMD-1210 TR-7-PL SN-NIBAR 快CMOS八路双向收发
Multilayer Ceramic Chip Capacitor; 1.0uF, 25V, Y5V, SMD-1206 ; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CAP 1.5UF 25V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.15UF 50V 5% X7R SMD-1210 TR-7-PL SN-NIBAR
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
Integrated Device Techn...
|
