| PART |
Description |
Maker |
| LMBTA93LT1G LMBTA92LT1 LMBTA92LT1G LMBTA93LT1 |
HighVoltageTransistor PNP Silicon HighVoltageTransistor进步党硅
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| PMP5201G PMP5201V PMP5201Y PMP5201Y115 PMP5201Y135 |
PNP/PNP matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BC327-16 BC328-16 BC327 BC327-25 BC327-40 BC328-40 |
Si-Epitaxial PlanarTransistors 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING)
Amplifier Transistors(PNP)
PNP general purpose transistor
|
KEC(Korea Electronics)
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Motorola Inc
Philips Semiconductors
|
| SLA4340 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
PNP NPN Darlington H-bridge
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| Q62702-F1063 BFT93 |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| 2SA1009 2SA1009A 2SA1009AH 2SA1009AM 2SA1009J 2SA1 |
PNP SILICON POWER TRANSISTORS 进步党硅功率晶体
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| ZXTD1M832TC ZXTD1M832 ZXTD1M832TA |
MPPSTM Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR 4000 mA, 12 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
Dual PNP Low Sat Transistor
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
