| PART |
Description |
Maker |
| MTFC4GMVEA-4MIT MTFC32GJVED-4MIT |
4GB, 8GB, 16GB, 32GB, 64GB e MMC
4GB, 8GB, 16GB, 32GB, 64GB e MMC
|
Micron Technology
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| HY27UG088GDM |
8Gb NAND Flash
|
Hynix
|
| K9F4G08U0D |
4Gb D-die NAND Flash
|
Samsung
|
| K9WAG08U1D K9K8G08U1D |
4Gb D-die NAND Flash
|
Samsung
|
| MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的（x16）的快闪记忆2M的（x16）的移动FCRAMTM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| TS16GJF220 |
16GB USB2.0 JetFlash垄芒220
16GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
| MT40A512M16JY-075EAIT MT40A512M16JY-083E |
8Gb: x4, x8, x16 DDR4 SDRAM
Automotive DDR4 SDRAM
|
Micron Technology
|
| TS8GJFV15 |
8GB USB2.0 JetFlash垄芒V15
8GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
| S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
| TS4GJFV15 |
4GB USB2.0 JetFlash垄芒V15
4GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
