| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| FS10UM-14A |
Bench Power Supply; No. of Outputs:1; Output Voltage:60V; Output Current:2A; Output Power Max:210W; Calibrated:No; Display Technology:LED RoHS Compliant: NA 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管)
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE
100V Single N-Channel Hi-Rel MOSFET in a PB-3A package
500V Single N-Channel Hi-Rel MOSFET in a PB-3A package
600V Single N-Channel Hi-Rel MOSFET in a PB-3A package
200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers
International Rectifier
ETC[ETC]
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| AUIRS2332JTR |
Automotive High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
|
International Rectifier
|
| IXTF1N450 |
High Voltage Power MOSFET
|
IXYS Corporation
|
| IXTF02N450 |
High Voltage Power MOSFET
|
IXYS Corporation
|
| GFCG20 |
N Channel High voltage, Power MOSFET
|
Gunter Seniconductor GmbH.
|
| GFCG50 |
N Channel high voltage, Power MOSFET
|
Gunter Seniconductor GmbH.
|
| APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL0 |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
|
