| PART |
Description |
Maker |
| STW8Q14C |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| B5B-437-CV |
B5B-437-CV is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-445-TL |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-20 |
B5B-433-20 is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-B505 |
B5B-433-B505 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| 2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| MUR110G MUR110RLG MUR115G MUR160G MUR115RLG MUR160 |
SWITCHMODE Power Rectifiers(寮??妯″?????存?绠々
1A 600V Ultrafast Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
ONSEMI[ON Semiconductor]
|
| MGF0952P |
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ICX412AQF |
Diagonal 8.933mm(Type 1/1.8) Frame Readout CCD
Diagonal 8.933mm (Type 1/1.8) Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras
|
SONY[Sony Corporation]
|
