| PART |
Description |
Maker |
| L2N7002LT1 L2N7002LT1G |
Small Signal MOSFET 115 mAmps, 60 Volts
|
LRC[Leshan Radio Company]
|
| 2N7000ZL1G |
Small Signal MOSFET 200 mAmps, 60 Volts
|
ON Semiconductor
|
| 2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
|
ONSEMI[ON Semiconductor]
|
| L2SK801LT1G L2SK801LT3G |
Small Signal MOSFET 310 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
| BS170/D BS170-D |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92
Small Signal MOSFET 500 mAmps60 Volts
|
ON Semiconductor
|
| 2N7002TA |
115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
|
| BS170 |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92(500mA,60V,小信号，N-沟道增强型MOS场效应管（TO-92封装
|
ON Semiconductor
|
| BS108ZL1 BS108/D BS108-D |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92
Fast Recovery Glass Passivated Rectifier Diodes
|
ON Semiconductor
|
| 2N1054 |
TRANSISTOR 1000 mA, 115 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 3 PIN, BIP General Purpose Small Signal
|
Vishay Semiconductors
|
| 2N7002LT1 ON0106 |
CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
|
|
