| PART |
Description |
Maker |
| FDLL920 FDLL921 FDLL922 FDLL923 1N5252 FTSO706 FTS |
General purpose diode. Working inverse voltage 50 V.
General purpose diode. Working inverse voltage 100 V.
General purpose diode. Working inverse voltage 150 V.
General purpose diode. Working inverse voltage 200 V.
500 mW silicon zener diode. Nominal zener voltage 24.0 V.
NPN high speed logic switch.
500 mW silicon zener diode. Nominal zener voltage 33.0 V.
|
Fairchild Semiconductor
|
| EN2101E 2SA150712 EN2101 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML
160V / 1.5A Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 90200-90399 9050R-9099R |
High Working Voltage: 50 V
|
M/A-COM Technology Solu...
|
| MPP10-05D12AB MPP10-05S05AB MPP10-05D15AB MPP10-05 |
REINFORCED INSULATION FOR 250VAC WORKING VOLTAGE
|
RSG Electronic Components GmbH
RSG Electronic Components G...
|
| 2SA1418 2SC3648 2SC3648T 2SA1418T 2SC3648S |
High-Voltage Switching/ Predriver Applications
High-Voltage Switching Predriver Applications
High-Voltage Switching, Predriver Applications
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | SOT-89
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 700MA I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 700mA的一（c）|采用SOT - 89
|
SANYO[Sanyo Semicon Device]
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 1N6302 1N6284A 1N6268A 1N6296A 1N6297A 1N6272A 1N6 |
Working Peak Reverse Voltage:8.92 V, 1500 W Transient Voltage Suppressor
TRANSIENT VOLTAGE SUPPRESSOR 瞬态电压抑制器
|
N.A.
EIC[EIC discrete Semiconductors]
Electronics Industry Public Company Limited
EIC discrete Semiconduc...
|
| SA48 SA75 SA78 SA9.0 SA8.5 SA110 SA7.0A SA6.0A SA5 |
Transient Voltage Suppressor Diodes 瞬态电压抑制二极管
Enclosed Switches Series LS: Side Plunger; 1NC 1NO DPDT Snap Action, Double Break; 0.5 in - 14NPT conduit; Compact/Non Plug-in
/Case:1206; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitance:270000pF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package
Ceramic Multilayer Capacitor; Capacitance:22000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:100V; Dielectric Characteristic:X7R; Package/Case:0805; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
|
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co., Ltd.
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
|
| ENN779D |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
|
Sanyo Semicon Device
|
| C1658 |
Approved for use with Conexant ADSL Chip Set Meets requirements of IEC950 for supplementary insulation, 250V working voltage
|
Electronic Theatre Controls, Inc.
ETC[ETC]
CoEv Inc
|
| C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage
|
CoEv Inc
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| 2SD1918 |
High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
|
TY Semiconductor Co., Ltd
|
