| PART |
Description |
Maker |
| HT6116 HT6116-70 |
CMOS 2K8-Bit SRAM
CMOS 2K??8-Bit SRAM
CMOS 2Kx8-Bit SRAM
|
HOLTEK[Holtek Semiconductor Inc]
|
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| UT62256SC-70 UT62256 UT62256SC-35 UT62256SC-35L UT |
32K X 8 BIT LOW POWER CMOS SRAM 32K的8位低功耗CMOS SRAM
From old datasheet system
|
UTRON Technology
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UT621024SC-70L UT621024SC-70LL UT621024SC-35L UT62 |
128K X 8 BIT LOW POWER CMOS SRAM 128K的8位低功耗CMOS SRAM
GT 8C 8#12 PIN PLUG
|
Rochester Electronics, LLC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
UTRON Technology
|
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM
CMOS 256 KBit Low Power SRAM
CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
| IDT6167 IDT6167LA IDT6167LA100D IDT6167LA100DB IDT |
CMOS STATIC RAM 16K (16K x 1-BIT) 16K的的CMOS静态RAM6K的1位）
CABLE SMA/BNC 24 RG-142 16K的的CMOS静态RAM6K的1位）
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC -40 to 85 16K的的CMOS静态RAM6K的1位）
Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP -40 to 85 16K的的CMOS静态RAM6K的1位）
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, PDSO20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 45 ns, CDIP20
CABLE SMA/BNC 36 RG-142
Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC 0 to 70
16K X 1 STANDARD SRAM, 70 ns, PDSO20
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
