| PART |
Description |
Maker |
| HY57V641620ELTP-5 HY57V641620ELTP-6 HY57V641620ELT |
SDRAM - 64Mb
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| 9864AASA W9864AASA |
64MB (8M x 64) SDRAM SO-DIMM MODULE(64MB (8M x 64)小型双列直插同步动态RAM模块)
From old datasheet system
|
Winbond Electronics Corp
|
| HY57V641620HGTP-55I HY57V641620HGTP-6I |
SDRAM - 64Mb
|
Hynix Semiconductor
|
| HY5DU643222AQ-4 HY5DU643222AQ-43 HY5DU643222AQ-5 H |
GDDR SDRAM - 64Mb
|
Hynix Semiconductor
|
| W3DG727V7D2 W3DG727V10D2 W3DG727V75D2 W3DG727V-D2 |
64MB - 8Mx72 SDRAM UNBUFFERED
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| V43658Y04VATG-75 |
64MB 168-PIN 133 MHZ SDRAM UNBUFFERED SODIMM 3.3 VOLT, 8M x 64
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HYM71V8635BT6 HYM71V8635BT6-H |
8Mx64|3.3V|K/H|x4|SDR SDRAM - Unbuffered DIMM 64MB
8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
64Mb H-die (x32) SDRAM Specification 64芯片（X32号）内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
