| PART |
Description |
Maker |
| MX66L51235FZ2I10G MX66L51235FMI10G MX66L51235FXDI1 |
3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| V23814-U1306-M130 V23815-U1306-M130 V23815-U1306-M |
SPECIALTY TELECOM CIRCUIT, XFO72
1.6 Gbit/s Rx Parallel Optical Link (...
1.6 Gbit/s Tx Parallel Optical Link (...
Parallel Optical Link: PAROLI T X AC, 1.6 Gbit/s 并行光链路：帕罗利德克萨斯州交流.6 Gbit / s
|
INFINEON[Infineon Technologies AG]
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| MB81EDS51654510 |
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
