| PART |
Description |
Maker |
| STU4N62K3 STP4N62K3 STI4N62K3 STF4N62K3 STFI4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAK package
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| STF3N62K3 STP3N62K3 STB3N62K3 STB3N62K309 STD3N62K |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package
N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
|
ST Microelectronics
STMicroelectronics
|
| STD3LN62K3 STF3LN62K3 STP3LN62K3 STU3LN62K3 |
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3 Power MOSFET DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3 Power MOSFE DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET IPAK
|
STMicroelectronics
STATEK CORPORATION
ST Microelectronics
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| FCD620N60ZF FCD620N60ZFCT-ND |
N-Channel SuperFETII FRFETMOSFET 600V, 7.3A, 620m
FCD620N60Z FN-Channel SuperFET II FRFET MOSFET 600 V 7.3 A 620 mΩ
|
Fairchild Semiconductor
|
| NDD04N62ZT4G NDP04N62ZG NDF04N62Z NDF04N62ZG |
N-Channel Power MOSFET 620 V, 1.8
|
ON Semiconductor
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STB4N62K3 STD4N62K3 |
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET
|
STMicroelectronics
|
| CAT28C65ANI-20 CAT28C65AKI-20 CAT28C65AJ-15 CAT28C |
128Kx8 EEPROM
2400 MHz to 2700 MHz; Package: PG:H-30256-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V;
2400 MHz to 2700 MHz; Package: PG: H-30248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,500.0 - 2,700.0 MHz; P1dB (typ): 85.0 W; Supply Voltage: 28.0 V;
2400 MHz to 2700 MHz; Package: PG: H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,620.0 - 2,680.0 MHz; P<sub>1dB</sub> (typ): 130.0 W; Supply Voltage: 28.0 V; x8的EEPROM
2400 MHz to 2700 MHz; Package: PG: H-31260-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P<sub>1dB</sub> (typ): 130.0 W; Supply Voltage: 28.0 V; x8的EEPROM
|
NXP Semiconductors N.V.
ZETTLER electronics GmbH
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| 2SC3011 |
High Gain :|S21e|2=12dB(TYP.) Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
|
TY Semiconductor Co., Ltd
|
| R9110 |
MOSFET, Switching; VDSS (V): 150; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.097; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
