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MTM60N06 - (MTM55N10 / MTM60N06) N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MTM60N06_6325365.PDF Datasheet


 Full text search : (MTM55N10 / MTM60N06) N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR


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46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Low-power, High performance 8-bit/16-bit secure microcontroller with 48K Byte ROM, 2K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM.
Low-power, High Performance 8-bit/16-bit secure microcontroller with 64K Byte ROM, 4K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 8K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
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