| PART |
Description |
Maker |
| HYS72T1G042ER-5-B |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022EP HYS72T512022EP-3.7-B HYS72T512022EP |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256000HR-3.7-A HYS72T256000HR-3S-A HYS72T256 |
240-Pin Registered DDR SDRAM Modules
|
Qimonda AG
|
| HYB18T1G400BF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYB18T1G400AF HYS72T128001HR |
240-Pin Registered DDR SDRAM Modules
|
Qimonda AG
http://
|
| HYS72T64300HP-3.7-A HYS72T64300HP-3S-A HYS72T12832 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128000HP |
240-Pin Registered DDR2 SDRAM Modules
|
http://
|
| HYS72T64001HR HYB18T256400AF |
240-Pin Registered DDR2 SDRAM Modules
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
| 0702871038 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 80 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 70287-1011 0702871011 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 26 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 26 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 70287-1015 0702871015 |
2.54mm (.100) Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
