PART |
Description |
Maker |
AP9T18GEH AP9T18GEJ |
G-S Diode embedded, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
AP2306CGN-HF |
Capable of 2.5V gate drive, Lower on-resistance
|
Advanced Power Electronics Corp.
|
AP2306GN-HF |
Capable of 2.5V gate drive, Lower on-resistance
|
Advanced Power Electronics Corp.
|
AP2323GN-HF |
Capable of 1.8V Gate Drive, Small Package Outline
|
Advanced Power Electronics Corp.
|
AP9922AGEO-HF AP9922AGEO-HF14 AP9922AGEO-HF-14 |
Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
AP2312GN |
Capable of 2.5V gate drive Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|