| PART |
Description |
Maker |
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC740L-GB300A2R IBM25PPC740L-GB350A2R IBM25P |
32-BIT, 300 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
32-BIT, 350 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
32-BIT, 375 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
32-BIT, 400 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
32-BIT, 333 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
32-BIT, 366 MHz, RISC PROCESSOR, CBGA360
|
Electronic Theatre Controls, Inc.
|
| IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
| IS61NVF102418-6.5B2 IS61NVF25672-6.5B1 IS61NVF5123 |
1M X 18 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 6.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
512K X 36 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 7.5 ns, PBGA209
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| EWIXP465AB EWIXP455AD EWIXP455ACT EWIXP455ADT EWIX |
266 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544
667 MHz, RISC PROCESSOR, PBGA544 LEAD FREE, PLASTIC, BGA-544
|
Intel, Corp.
INTEL CORP
|
| US115T US115TE US112 US112T US112E US211 US211E US |
Analog IC
Intel® LXT16726 DeMUX, 132-pin BGA, Tray
Intel® LXT16726 DeMUX, 142-pin BGA, Tray
|
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
|
