| PART |
Description |
Maker |
| SA5.0 SA8.0 SA51 SA70 SA6.0 SA30 SA7.0 SA48 SA9.0 |
Breakdown Voltage:5.0-170CA Volts Pesk Pulse Power:500 Watts
|
Chendahang Electronics Co., Ltd
Chendahang Electronics Co.,...
Chendahang Electronics ...
|
| RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode
8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
surface mount silicon Zener diodes 表面贴装硅稳压二极管
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode
DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode
Constant Voltage diode 400mW DO-34
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
| HDSE8U60G |
High breakdown voltage
|
SemiHow Co.,Ltd.
|
| PS7141L-2B PS7141L-1B-E3 PS7141L-1B-E4 PS7141L-1B |
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH, 2-CH OPTICAL COUPLED MOSFET 6引脚DIP00击穿电压通常闭式1通道通道光学耦合MOSFET
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH, 2-CH OPTICAL COUPLED MOSFET 6引脚DIP00击穿电压通常闭式1通道2通道光学耦合MOSFET
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH 2-CH OPTICAL COUPLED MOSFET
|
California Eastern Laboratories, Inc.
NEC Corp.
NEC[NEC]
California Eastern Labs
|
| SMTPA100 SMTPA130 SMTPA120 SMTPA180 SMTPA200 SMTPA |
TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
|
Galaxy Semi-Conductor Holdings Limited
|
| 2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 2SB0792 2SB792A 2SB0792A 2SB792 |
For High Breakdown Voltage Low-noise Amplification
|
PANASONIC[Panasonic Semiconductor]
|
| TXD2SA-12V TXD2SA-12V-Z TXD2SA-24V TXD2SA-24V-Z TX |
High Breakdown Voltage Relay Communications (xDSL)
|
Panasonic Semiconductor
Panasonic Battery Group
|
| ZB2BL4 ZB2BL2 ZB2BV6 ZB2BV3 ZB2BS54 ZB2BW84354 ZB2 |
CONTROL AND SIGNALLING UNITS
DIODE TVS 75V 600W BIDIR 5% SMB
DIODE TVS 36V 600W BI-DIR SMB 指示灯头
传奇\u0026#39;紧急停止\u0026#39;
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:13V; Breakdown Voltage, Vbr:14.4V; Package/Case:DO-214; Leaded Process Compatible
LEGEND PLATE B>1-11
DIODE TVS 9.0V 600W UNI 5% SMB
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:30V; Breakdown Voltage, Vbr:33.3V; Peak Pulse Power PPK @ 10x1000uS:600W; Package
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:51V; Breakdown Voltage, Vbr:56.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:18V; Breakdown Voltage, Vbr:20V; Peak Pulse Power PPK @ 10x1000uS:600W; Package
Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Surface Mount; Polarization:Bipolar; Power Rating:600W; Type:TVS-Bidirectional; Voltage Rating:22V
|
List of Unclassifed Man...
Square D by Schneider Electric
|
