PART |
Description |
Maker |
HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs SDRAM Components - 128Mb (16Mx8) PC133 3-3-3 SDRAM Components - 128Mb (8Mx16) PC133 3-3-3 SDRAM Components - 128Mb (32Mx4) PC133 3-3-3 128-MBit Synchronous DRAM
|
Infineon
|
EM488M1644LBC EM488M1644LBC-6F |
128Mb (2M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
H57V1262GTR |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
K4S56323PF-FG K4S56323PF-F90 K4S56323PF-F75 K4S563 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
TriQuint Semiconductor, Inc. Jameco Electronics Anpec Electronics, Corp. SAMSUNG[Samsung semiconductor]
|
K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF- |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
|
Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
IS42VM32160C IS42VM32160C-10BI IS42VM32160C-10BL I |
512Mb Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E- |
Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IS42VM16160E |
4M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|