| PART |
Description |
Maker |
| EDI2KG464128V15D |
4x128Kx64, 3.3V Synchronous Flow-Through Card Module(4x128Kx64, 3.3V5ns,同步静态RAM卡模流通结构）) 4x128Kx64.3V的同步流动，通过卡模块（4x128Kx64.3伏，15纳秒，同步静态内存卡模块（流通结构）
|
Ecliptek, Corp.
|
| HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IP2002 IP2002TR |
Synchronous Buck Multiphase Optimized BGA Power Block.
Synchronous Buck Synchronous Buck Integrated Power Semiconductors/ Drivers & Passives
|
International Rectifier
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| M374S0823DTS |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 74LVX163MTCX 74LVX163MX 74LVX163SJX |
Low Voltage Synchronous Binary Counter with Synchronous Clear
|
Fairchild Semiconductor
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| IRU3007 IRU3007CW IRLR024 MBRB1035 HIP6019 IRL3103 |
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK / NON-SYNCHRONOUS /ADJUSTABLE LDO AND 200mA ON-BOARD LDO
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK/ NON-SYNCHRONOUS/ADJUSTABLE LDO AND 200mA ON-BOARD LDO
5 Bit Prog SynchBuck CIC Non Synch Adj LDO 200mA in a 28-Pin SOIC(WB) package
|
IRF[International Rectifier]
|
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
