PART |
Description |
Maker |
M52D32321A-10BG M52D32321A-7.5BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM RIEMEN SYNCHRON HTD L 305MM B 15MM RIEMEN SYNCHRON HTD L 575MM B 15MM Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits RIEMEN SYNCHRON HTD L 480MM B 30MM RIEMEN SYNCHRON HTD L 560MM B 200MM RIEMEN SYNCHRON HTD L 600MM B 200MM Dual/Triple-Voltage µP Supervisory Circuits RIEMEN SYNCHRON HTD L 640MM B 200MM Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout RIEMEN SYNCHRON HTD L 720MM B 30MM 3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE RIEMEN SYNCHRON HTD L 880MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 200MM RIEMEN SYNCHRON HTD L 450MM B 15MM 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 2-Wire-Interfaced 8-Bit I/O Port Expander with Reset Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE RIEMEN SYNCHRON HTD L 1100MM B 15MM RIEMEN SYNCHRON HTD L 980MM B 15MM RIEMEN SYNCHRON HTD L 1800MM B 15MM RIEMEN SYNCHRON HTD L 1120MM B 30MM RIEMEN SYNCHRON HTD L 1120MM B 200MM RIEMEN SYNCHRON HTD L 1200MM B 200MM RIEMEN SYNCHRON HTD L 1260MM B 200MM RIEMEN SYNCHRON HTD L 1600MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 30MM RIEMEN SYNCHRON HTD L 1420MM B 15MM RIEMEN SYNCHRON HTD L 1600MM B 30MM RIEMEN SYNCHRON HTD L 1270MM B 15MM RIEMEN SYNCHRON HTD L 1200MM B 30MM RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米 RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米 RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米 RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd. Amphenol, Corp. Rubycon, Corp.
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q |
512K x 16Bit x 2Banks
|
Elite Semiconductor Memory Technology Inc.
|
M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L161 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc. ETC
|
M12L16161A08 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M12S16161A-15T M12S16161A-15TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
GS8150F32 |
16Mb12K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology
|
HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|