| PART |
Description |
Maker |
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| HYM532210ATEG-70 HYM532210ASLTE-70 HYM532210ATE-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Atmel, Corp.
TE Connectivity, Ltd.
|
| IBM11S2320HM-70T IBM11S4320HM-70T IBM11S4320HP-60T |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Ecliptek, Corp.
|
| IBM11S1320BLB-70 IBM11S1320BNA-60 IBM11S1320BNA-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
|
| IBM11S2325LP-6RT IBM11S1325LP-70T IBM11S1325LP-6RT |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Abracon, Corp.
|
| MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| HYM591000CLM-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
Cypress Semiconductor, Corp.
|
| HB56A49AT-8 HB56A49GBR-6A HB56A49ATR-6A HB56A49AR- |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
x(8 1) Fast Page Mode DRAM Module × 1）快速页面模式内存模
|
Vishay Intertechnology, Inc.
Analog Devices, Inc.
|
