| PART |
Description |
Maker |
| K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNECTOR ACCESSORY
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V28322 |
4 Banks X 1M X 32Bit Synchronous DRAM
|
HYNIX
|
| M52D32321A-7BG M52D32321A09 M52D32321A-10BG |
512K x 32Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323L |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
