| PART |
Description |
Maker |
| K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R100 |
128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作），革命销出。在商用和工业温度范围运
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT7133LA IDT7133SA IDT7143LA IDT7143SA IDT7133LA5 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
2K x 16 Dual-Port RAM
HIGH SPEED 2K X 16 DUAL-PORT SRAM
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68
30V N-Channel Logic Level PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, PQCC68
150V N-Channel UltraFET Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 25 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
INDUCT 22.8UH 4.9A 260KHZ KLIPMT 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高2K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
400V N-Channel MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68
100V N-Channel Trench MOSFET 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT7130SA20PF IDT7130SA25PF IDT7130SA IDT7130SA25C |
Dual Integrated Solenoid Driver; Package: MLP 8x12; No of Pins: 18; Container: Tape & Reel
30V N-Channel PowerTrench SyncFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CQFP48
Single P-Channel Logic Level PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
Single P-Channel Logic Level PowerTrench MOSFET 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQFP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQFP48
Asynchronous Communications Element With Autoflow Control 48-LQFP 0 to 70 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| IC61LV2568 IC61LV2568-8TI IC61LV2568-10K IC61LV256 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
256K x 8 Hight Speed SRAM with 3.3V
|
ICSI[Integrated Circuit Solution Inc]
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C |
128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静电RAM5V工作，旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静态RAM5V工作，旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AS7C1024B AS7C1024BV1.2 AS7C1024B-20TJIN AS7C1024B |
From old datasheet system
SRAM - 5V Fast Asynchronous
High Speed CMOS Logic Hex Inverters 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-PDIP -55 to 125
High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NOR Gates 14-PDIP -55 to 125
|
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| CXK581000M CXK581000M-10L CXK581000M-10LL CXK58100 |
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-41; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
IC,SRAM,128KX8,CMOS,DIP,32PIN,PLASTIC
131072-word x 8-bit HIGH SPEED COMS STATIC RAM
|
SONY[Sony Corporation]
|
|
