| PART |
Description |
Maker |
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| FSOT-65 FSOT-30 |
RESISTOR, WIRE WOUND, 70 W, 3; 5 %, 260; 400 ppm, 1 ohm - 20 ohm, CHASSIS MOUNT RADIAL LEADED
RESISTOR, WIRE WOUND, 30 W, 3; 5 %, 260; 400 ppm, 1 ohm - 20 ohm, CHASSIS MOUNT RADIAL LEADED
|
Bourns, Inc.
IRC Advanced Film
|
| RFP8P10 |
8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
|
Intersil Corporation
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
| DF340JAAEHSB DF340JAAEHD1B |
10 A, 400 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
SOLITRON DEVICES INC
|
| IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFP450 |
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
|
